Electric voltage redistribution effect in Schottky barrier structures based on Si<P,Ni> under hydrostatic pressure

Abstract The paper presents the results of strain-effect studies in diode structures with Schottky barrier made on basis n-Si<P> and n-Si<P,Ni> resistivities 102 - 105 Ohm·cm under all-round hydrostatic pressure. It is shown that as resistivity base area increases, its rectifying properties worsens. was found worse property surface not due to presence compensating impurities, but depends only resistance area. In based n Si<P,Ni> ~104 potential almost formed. For first time it pressure there high strain sensitivity redistributions electric voltage between contact